PhD, Nano-Silicon Group Leader, Principal Research Fellow, Principal Growth Scientist, Warwick University (United Kingdom)
Prof. Maksym Myronov is an expert in epitaxial growth, materials characterization and devices technologies of the Group IV (Si, Ge, Diamond, Si1-xGex, Si1-xCx, Ge1-xSnx, Ge1-x-ySnxSiy, 3C-SiC, 4H-SiC, 6H-SiC etc) and III-V (InSb, GaAs etc) semiconductors. Prof. Myronov is the Group Leader of Nano-Silicon in Physics Department at the University of Warwick and has been with the group since 2008 as a Principal Research Fellow and Principal Growth Scientist. In 2008, he established SiGe Reduced Pressure Chemical Vapour Deposition (RP-CVD) growth capabilities at Warwick. Since then Prof. Myronov has been leading and developing these research directions followed by expansion to Si-Ge-C-Sn and SiC epitaxial growth capabilities. Later on he installed the first in the UK Silicon Carbide CVD system which has expanded the Warwick’s epitaxial growth capabilities to 3C-SiC, 4H-SiC and 6H-SiC wide band gap semiconductor materials.